Document is current

Any future updates will be listed below

Formation properties of an InGaN active layer for high-efficiency InGaN/GaN multi-quantum-well-nanowire light-emitting diodes

Crossref DOI link: https://doi.org/10.3938/jkps.69.772

Published Online: 2016-09-22

Published Print: 2016-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark