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Simulation of residual stress and its impact on a poly-silicon channel for three-dimensional, stacked, vertical-NAND flash memories

Crossref DOI link: https://doi.org/10.3938/jkps.70.1041

Published Online: 2017-06-24

Published Print: 2017-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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