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Solution-processed indium-zinc-oxide thin-film transistors from a fast and stable pre-annealing process with a femtosecond laser

Crossref DOI link: https://doi.org/10.3938/jkps.70.872

Published Online: 2017-05-13

Published Print: 2017-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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