Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time
Crossref DOI link: https://doi.org/10.3938/jkps.71.1038
Published Online: 2017-10-02
Published Print: 2017-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yoo, Myoung Han
Ko, Pil Ju
Kim, Nam-Hoon
Lee, Hyun-Yong
License valid from 2017-10-02