Updates are available Erratum dated 2017-09-08

Click to view Erratum: https://doi.org/10.3938/jkps.71.310

A study on N2O direct oxidation process with re-oxidation annealing for the improvement of interface properties in 4H-SiC MOS capacitor

Crossref DOI link: https://doi.org/10.3938/jkps.71.150

Published Online: 2017-08-12

Published Print: 2017-08

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