A new DG nanoscale TFET based on MOSFETs by using source gate electrode: 2D simulation and an analytical potential model
Crossref DOI link: https://doi.org/10.3938/jkps.71.215
Published Online: 2017-08-20
Published Print: 2017-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ramezani, Zeinab
Orouji, Ali A.
License valid from 2017-08-01
