Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing
Crossref DOI link: https://doi.org/10.3938/jkps.71.360
Published Online: 2017-09-19
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yoon, Hyung Sup
Min, Byoung-Gue
Lee, Jong Min
Kang, Dong Min
Ahn, Ho Kyun
Cho, Kyu-Jun
Do, Jae-Won
Shin, Min Jeong
Jung, Hyun-Wook
Kim, Sung Il
Kim, Hae Cheon
Lim, Jong Won
License valid from 2017-09-01