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Lattice-Matched AlInGaN Electron-Blocking Layer Embedded in High-Performance GaN-based Light-Emitting Devices

Crossref DOI link: https://doi.org/10.3938/jkps.72.1194

Published Online: 2018-05-15

Published Print: 2018-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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