A model for the InGaAs/InP single photon avalanche diodes with multiple-quantum wells in the charge multiplication region
Crossref DOI link: https://doi.org/10.3938/jkps.72.289
Published Online: 2018-01-27
Published Print: 2018-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Seo, H. S.
Park, S. H.
Kwak, S.
Ahn, D.
Text and Data Mining valid from 2018-01-01
Article History
Received: 22 August 2017
First Online: 27 January 2018