Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress
Crossref DOI link: https://doi.org/10.3938/jkps.73.1879
Published Online: 2018-12-29
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jeong, Seonghoon
Kim, Hyunsoo
Lee, Sung-Nam
Text and Data Mining valid from 2018-12-01
Article History
Received: 28 June 2018
Accepted: 28 August 2018
First Online: 29 December 2018