Electrical Properties of Au/n-GaN Schottky Junctions with an Atomic-Layer-Deposited Al2O3 Interlayer
Crossref DOI link: https://doi.org/10.3938/jkps.73.349
Published Online: 2018-08-23
Published Print: 2018-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Hogyoung
Cho, Yunae
Kim, Dong-Wook
Kim, Dong Ha
Kim, Yong
Choi, Byung Joon
Text and Data Mining valid from 2018-08-01
Article History
Received: 16 March 2018
First Online: 23 August 2018