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High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp

Crossref DOI link: https://doi.org/10.3938/jkps.74.1052

Published Online: 2019-06-11

Published Print: 2019-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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