Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator
Crossref DOI link: https://doi.org/10.3938/jkps.74.1171
Published Online: 2019-06-26
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jo, Sangwook
Yoo, Geonwook
Heo, Junseok
Text and Data Mining valid from 2019-06-01
Version of Record valid from 2019-06-01
Article History
Received: 9 April 2019
Revised: 23 April 2019
First Online: 26 June 2019