The Effects of Boron Passivation and Re-Oxidation on the Properties of the 4H-SiC/SiO2 Interface
Crossref DOI link: https://doi.org/10.3938/jkps.74.679
Published Online: 2019-04-18
Published Print: 2019-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jeong, Chungbu
Kim, Kwangsoo
Text and Data Mining valid from 2019-04-01
Article History
Received: 2 October 2018
Accepted: 12 November 2018
First Online: 18 April 2019