Variations of Dark and Photo Currents of Metal-Semiconductor-Metal Photodetectors Fabricated on Ge Epilayer Grown on Si Substrate Caused by the Dimension of Interdigitated Pt Finger Electrodes
Crossref DOI link: https://doi.org/10.3938/jkps.74.713
Published Online: 2019-04-18
Published Print: 2019-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zumuukhorol, M.
Boldbaatar, S.
Shim, Kyu-Hwan
Choi, Chel-Jong
Khurelbaatar, Z.
Lee, Sung-Nam
Text and Data Mining valid from 2019-04-01
Article History
Received: 14 February 2019
Accepted: 8 March 2019
First Online: 18 April 2019