Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point
Crossref DOI link: https://doi.org/10.3938/jkps.75.577
Published Online: 2019-10-26
Published Print: 2019-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ryu, Mee-Yi
Harris, Thomas R.
Wang, Buguo
Yeo, Yung Kee
Hogsed, Michael R.
Lee, Sang Jo
Kim, Jong Su
Kouvetakis, John
Text and Data Mining valid from 2019-10-01
Version of Record valid from 2019-10-01
Article History
Received: 2 July 2019
Revised: 13 August 2019
Accepted: 22 August 2019
First Online: 26 October 2019