AlyGa1−yAs Bound GazIn1−zP Strain Compensation for Optical Enhancement of In0.07GaAs/GaAs1−xPx 940-nm Light-Emitting Diodes
Crossref DOI link: https://doi.org/10.3938/jkps.75.80
Published Online: 2019-07-08
Published Print: 2019-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Hyung-Joo
So, Jin-Su
Kim, Hong-Gun
Kwac, Lee-Ku
An, Won-Chan
Text and Data Mining valid from 2019-07-01
Version of Record valid from 2019-07-01
Article History
Received: 19 March 2019
Revised: 8 May 2019
Accepted: 13 May 2019
First Online: 8 July 2019