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Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistors Fabricated with a MgF2 Passivation Layer

Crossref DOI link: https://doi.org/10.3938/jkps.76.278

Published Online: 2020-02-22

Published Print: 2020-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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