Crossmark

A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices

Published Online: 2020-07-29

Published Print: 2020-07

Authors

Min, Byoung-Gue

Chang, Sung-Jae

Jung, Hyun-Wook

Yoon, Hyung Sup

Lee, Jong-Min

Jang, Woo-Jin

Kang, Dong-Min
License Information

Text and Data Mining valid from 2020-07-01

Version of Record valid from 2020-07-01
More Information

Article History

Received: 26 November 2019

Revised: 24 March 2020

Accepted: 11 May 2020

First Online: 29 July 2020

Document is current