Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide
Crossref DOI link: https://doi.org/10.3938/jkps.77.277
Published Online: 2020-08-29
Published Print: 2020-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Sungsoo
Park, Jin-Seong
Hong, Yongtaek
Text and Data Mining valid from 2020-08-01
Version of Record valid from 2020-08-01
Article History
Received: 1 May 2020
Revised: 20 May 2020
Accepted: 22 May 2020
First Online: 29 August 2020