Impact of ALD HfO2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga2O3 MOSFETs: A Simulation Study
Crossref DOI link: https://doi.org/10.3938/jkps.77.317
Published Online: 2020-08-29
Published Print: 2020-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Park, Tae Ho
Yang, Jeong Yong
Ma, Jiyeon
Yoo, Geonwook
Text and Data Mining valid from 2020-08-01
Version of Record valid from 2020-08-01
Article History
Received: 2 July 2020
Revised: 7 July 2020
Accepted: 8 July 2020
First Online: 29 August 2020