Improvement of device performances, including electrostatic discharge characteristics, of InGaN/GaN light-emitting diodes by using a Si-doped graded superlattice
Crossref DOI link: https://doi.org/10.3938/jkps.70.1001
Published Online: 2017-06-16
Published Print: 2017-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Kwanjae
Lee, Cheul-Ro
Ahn, Haeng-Keun
Kim, Jin Soo
Chung, Tae-Hoon
Kim, Yoon Seok
Ryu, Mee-Yi
Ko, Young Ho
License valid from 2017-06-01