Characterization of strain relaxation behavior in Si1−xGex epitaxial layers by dry oxidation
Crossref DOI link: https://doi.org/10.3938/jkps.71.701
Published Online: 2017-09-22
Published Print: 2017-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jang, Hyunchul
Kim, Byongju
Koo, Sangmo
Park, Seran
Ko, Dae-Hong
Text and Data Mining valid from 2017-09-22
Article History
Received: 11 August 2017
First Online: 22 September 2017