Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes
Crossref DOI link: https://doi.org/10.3938/jkps.71.707
Published Online: 2017-07-18
Published Print: 2017-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kang, In Ho
Na, Moon Kyong
Seok, Ogyun
Moon, Jeong Hyun
Kim, H. W.
Kim, Sang Cheol
Bahng, Wook
Kim, Nam Kyun
Park, Him-Chan
Yang, Chang Heon
Text and Data Mining valid from 2017-07-18
Article History
Received: 25 May 2017
First Online: 18 July 2017