Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition
Crossref DOI link: https://doi.org/10.3938/jkps.72.101
Published Online: 2018-01-07
Published Print: 2018-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Youngmo
Park, Jiwoo
Sohn, Hyunchul
License valid from 2018-01-01