Investigation of Defect Distributions in SiO2/AlGaN/GaN High-Electron-Mobility Transistors by Using Capacitance-Voltage Measurement with Resonant Optical Excitation
Crossref DOI link: https://doi.org/10.3938/jkps.72.1332
Published Online: 2018-06-08
Published Print: 2018-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Tae-Soo
Lim, Seung-Young
Park, Yong-Keun
Jung, Gunwoo
Song, Jung-Hoon
Cha, Ho-Young
Han, Sang-Woo
Text and Data Mining valid from 2018-06-01
Article History
Received: 1 December 2017
First Online: 8 June 2018