Improved interface characteristics of Mo/SiO2/4H-SiC metal-oxide-semiconductor with post-metallization annealing
Crossref DOI link: https://doi.org/10.3938/jkps.72.166
Published Online: 2018-01-07
Published Print: 2018-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lee, Jae-Gil
Kim, Dong-Hwan
Eom, Su-Keun
Roh, Seung-Hyun
Seo, Kwang-Seok
Kim, Hyun-Seop
Kim, Hyungtak
Cha, Ho-Young
Byun, Young-Chul
License valid from 2018-01-01