Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Crossref DOI link: https://doi.org/10.3938/jkps.76.837
Published Online: 2020-05-12
Published Print: 2020-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jung, Hyun-Wook
Chang, Sung-Jae
Ahn, Ho-Kyun
Kim, Haecheon
Lim, Jong-Won
Do, Jae-Won
Text and Data Mining valid from 2020-05-01
Version of Record valid from 2020-05-01
Article History
Received: 5 December 2019
Revised: 22 January 2020
Accepted: 28 January 2020
First Online: 12 May 2020